Features
1• Bidirectional EMI Filtering and Line Termination
With Integrated ESD Protection
– –3-dB Bandwidth 300 MHz
• IEC 61000-4-2 Level 4 ESD Protection
– ±15-kV Contact Discharge
– ±15-kV Air Gap Discharge
• DC Breakdown Voltage: 6 V (Minimum)
• Low Leakage Current: 0.1 µA (Maximum)
• Low Noise C-R-C Filter Topology
• Integrated VCC Clamp Eliminates the Need for
External ESD Protection
• Space-Saving DPV (0.5-mm Pitch), DQD
Packages (0.4-mm Pitch)
Applications
• End Equipment
– Cell Phones
– Tablets
– PDAs
– Hotspots
• Interfaces
– SIM Cards
Description
The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.
Overview
The TPD3F303 is a highly-integrated three-channel EMI filter and unidirectional TVS based protection diode array. This device can be used for a range of applications such as cell phones, tablets, hotspots, and PDAs.
Bidirectional EMI Filtering and Line Termination With Integrated ESD Protection
This device provides bidirectional EMI filtering, integrated line-termination resistors, and integrated ESD protection.
Device Functional Modes The TPD3F303 is a passive integrated circuit that triggers when voltages are above VBR or below Vf (–0.7 V).
During ESD events, voltages as high as ±15 kV (air or contact) can be directed to ground through the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD3F303 (usually within 10s of nanoseconds) the device reverts to passive.
Application Information
The TPD3F303 is a diode type TVS + EMI filter which is used to provide a path to ground for dissipating ESD events on signal lines between a SIM card slot and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC across the termination resistors.
Detailed Design Procedure
To begin the design process, some parameters must be decided upon; the designer must know the following: • Voltage range of the signal on all protected lines • Required ESD protection needed
Signal Range
The TPD3F303 supports signal ranges from 0 V to 5.5 V, which supports the SIM card application
Power Supply Recommendations
This device is a passive ESD device, so there is no need to power it. Take care not to violate the recommended I/O specification (0 V to 5.5 V) to ensure the device functions properly.
Layout Guidelines
• The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector.
• Route the protected traces as straight as possible.
• Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.