The proven 62 mm devices are designed in a half-bridge topology and are based on the recently introduced advanced M1H silicon carbide (SiC) MOSFET technology. This package enables SiC to be used in medium power applications above 250 kW, where silicon reaches the limits of power density through IGBT technology. The list of applications now also includes solar, servers, energy storage, electric vehicle chargers, traction, commercial induction cooking and power conversion systems compared to 62mm IGBT modules.
The M1H technology enables a significantly wider gate voltage window, ensuring high robustness against driver- and layout-induced gate voltage spikes, even at high switching frequencies. In addition to this, extremely low switching and transmission losses minimise cooling requirements. In combination with high reverse voltages, these devices fulfil another requirement of modern system design. By using Infineon's CoolSiC chip technology, it is possible to increase the efficiency of converter designs, increase the nominal power per inverter and reduce system costs.
With a base plate and screw connections, the kit has a very robust mechanical design optimised for highest system availability, lowest service costs and loss of downtime. Excellent reliability is achieved through high thermal cycling capability and a continuous operating temperature of 150°C (T vjop ). Symmetrical internal package design provides identical switching conditions for upper and lower switches. Alternatively, the thermal performance of the module can be further enhanced by pre-coating with Thermal Interface Material (TIM).
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