What is the new type of storage RRAM? Why are major international manufacturers making arrangements?
Recently, Infineon was revealed to be introducing RRAM technology for automotive AURIX TC4x products, and RRAM technology from other major manufacturers has begun to introduce Infineon’s automotive MCU.
Obviously, behind Infineon's choice of RRAM is the rise of the new memory market. In 2019, RRAM has already moved towards the road of new embedded storage. Until today, the rapid development of RRAM still adds luster to the field of storage technology. A rising star in the storage industry, RRAM is well-deserved.
1. In addition, it is reported that the growth of new memory will climb to 40 billion US dollars in 2032, and the future development is worth looking forward to! It can be seen that new storage has entered the fast lane of development.
2. In the field of possible new storage architectures in the future, the emergence of new computing architectures for artificial intelligence and other applications will provide opportunities for new storage applications.
As early as 2013, Crossbar has released a new type of RRAM chip, which can store 1TB of data in the size of a postage stamp. In 2014, the new MRAM and RRAM were launched, and the revolution in the memory market has swept through at that time. In 2016, scientists studied the working mechanism of RRAM memory and found a more energy-saving method. However, as 3D flash memory entered the market prior to RRAM technology, RRAM technology lagged behind. Until 2017, RRAM suddenly had a sign of rewriting the history of memory, and some major manufacturers returned to the memory market, targeting MRAM and RRAM.
Resistive RAM (RRAM) is a non-volatile memory based on the reversible conversion between the high-resistance state and the low-resistance state under the action of an applied electric field by the resistance of a non-conductive material.
In fact, whether it is PCRAM or RRAM, there are semiconductor companies actively involved in the development, such as the Optane memory that Intel is committed to promoting, which belongs to the category of PCRAM.
In 2019, MIT self-healing simulations using RRAM and CNFET technology were used to fabricate carbon nanotube operational amplifiers in 4-bit capacitive digital-to-analog converters.
In 2021, in a breakthrough that promises to greatly advance in-memory energy storage in resistive RAM (RRAM) devices, CEA-Leti proposes a "novel approach" that allows these devices to operate as both energy storage elements and memories, depending on to the applied bias. In addition, RRAM-based neuromorphic chips will lead the new wave of edge computing. Today, many RRAM production lines are being built, and the architecture of NeuRRAM was designed in collaboration with UC San Diego's Gert Cauwenberghs lab, which pioneered the design of low-power neuromorphic hardware.
